摘要
采用射频溅射方法成功制备了由过渡族元素Fe和半导体材料In2O3交替生长构成的Fe/In2O3/Fe多层膜。室温下,磁性测量结果表明样品具有超顺磁性,符合朗之万方程;磁电阻比的最大值为2.93%,遵从颗粒膜磁电阻的平方律。上述实验结果表明该多层膜样品具有类似于颗粒膜的结构。
Fe/In2O3/Fe multilayer films have been prepared by RF sputtering method. The magnetic measurements at room temperature indicated that the sample shows superp aramagnetism and magnetization versus magnetic field of the sample follows Langevin function and a magnetoresistance (MR) ratio of 2.93% was obtained at room temperature. The fitting result shows that the MR ratio is proportional to the square of magnetization of the film indicating spin-dependent tunneling effect.
出处
《磁性材料及器件》
CAS
CSCD
2002年第5期1-3,26,共4页
Journal of Magnetic Materials and Devices
基金
国家自然科学基金资助课题(59571016)
