摘要
基于TSMC 0.18μm CMOS工艺,设计并实现了一款宽带压控振荡器。该压控振荡器采用互补型交叉耦合结构,应用6位开关电容阵列实现宽调谐范围。通过选取高品质因子值电感、应用二次谐波谐振滤波技术、改进开关电容阵列结构,实现对相位噪声性能的优化。测试结果表明,在温度为27℃、电源电压为1.8V条件下,该压控振荡器频率调谐范围为3.26GHz～5.27GHz,在偏离中心频率1MHz处的相位噪声为-121.3dBc/Hz。
Based on TSMC 0.18μm CMOS process, a wideband voltage-controlled oscillator is designed and implemented. In this oscillator, a complementary cross couple structure is utilized, and 6 bits switched capacitor arrays are used to achieve the wide tuning range. By selecting high quality factor value inductance, applying second harmonic resonance filtering technology, and improving switched capacitor array structure, the phase noise performance is optimized. At normal temperature of 27 degrees Celsius, test results show that the voltage-controlled oscillator has a frequency tuning range of 3.26 GHz to 5.27 GHz at 1.8 V supply voltage. The phase noise is -121.3 dBc/Hz at 1MHz offset from center frequency.
作者
张博
王三路
孙景业
吴昊谦
ZHANG Bo;WANG Sanlu;SUN Jingye;WU Haoqian(School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China)
出处
《西安邮电大学学报》
2019年第1期47-51,共5页
Journal of Xi’an University of Posts and Telecommunications
基金
陕西省重点研发计划资助项目(2017ZDXM-GY-004)
陕西省教育厅服务地方专项计划资助项目(15JF029)
关键词
压控振荡器
宽调谐范围
二次谐波谐振滤波
Voltage-controlled oscillator
wide tuning range
second harmonic resonance filtering
