摘要
本文报道了一种工作在16.0～17.0GHz单片集成180°的移相器.文中通过对无源工作的GaAs MESFET的建模,分析了影响移相器性能的主要参数,以及这些参数的最佳取值.制作在2.45×2.80×0.2mm芯片上的移相器其参数为:插损小于4.03dB,输入电压驻波比小于1.66,输出电压驻波比小于1.71,相移偏差在12.5°以内.
A Ku-band 180° monolithic Integrated phase shifter is described in this paper. The influence of some important parameters on its performance is analysed through the modeling of GaAs MESFET as a passive element. Optimum values of those parameters are determined. The phase shifter fabricated on a 2.45 × 2.80 × 0.2 mm chip and operated in the 16.0-17.0GHz band has an Insertion loss of less than 4.03dB and a phase deviation of less than 12.5° around the 180° phase shift. The input and output VSWR of the shifter are less than 1.66 and 1.71, respectively.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第1期8-12,共5页
Research & Progress of SSE
