摘要
CL256型MOS图象传感器是一种新型的固体图象传感器,国外又称为自扫描光电二极管列阵(Self Scanned Photodiode Array,简称SSPD器件)。该器件采用了硅栅P-MOS工艺,而作为扫描电路的移位寄存器是采用的一种带变容管自举电路的三管动态无比电路。这是一种高速度低功耗电路,对研制高位数的SSPD器件尤为重要。 文中叙述了CL256型MOS图象传感器的电路工作原理,工艺实验及实验结果。
Model CL256 MOS Image Sensor is a newly developed solid image sensor, called self-scanned photodiode array(SSPD)abroad. Silicon gate P-MOS technique has been adopted in developing the device ,and a kind of three FETS dynamic circuit with varactor bootstrap has been adopted in developing the shift register used as scanned circuit. The circuit has the advantages of high speed and low power consumption. It is very important in developing high-oder digit SSPD devices.
出处
《重庆大学学报（自然科学版）》
EI
CAS
CSCD
1991年第3期25-29,共5页
Journal of Chongqing University
关键词
图象传感器
MOS
SSPD
MOS image sensor
self-scanned photodiode array
bootstrap circuit
silicon gate P-MOS technique
