摘要
采用单靶磁控溅射法制备了铜锌锡硫(CZTS)薄膜,利用X射线衍射仪(XRD)、拉曼光谱(Raman)、紫外-可见-近红外分光光度计(UV-Vis-NIR)和扫描电镜(SEM)分别对CZTS薄膜的物相结构、光学性能以及表面形貌进行表征,结果表明,退火后的CZTS薄膜具有单一相的锌黄锡矿结构、适合的禁带宽度(1.51eV)以及平整致密的表面形貌。通过制备CZTS/n-Si异质结光电探测器,光电性能测试显示,器件在450,635和980nm波长的光源下均具有良好的光伏效应。在0V偏压,功率密度为3mW/cm^2的980nm光源照射条件下,器件的响应的上升时间(τr)和下降时间(τd)分别为τr=41ms,τd=126ms,电流开关比为434.9。CZTS/n-Si异质结结构有利于提高载流子的分离效率,比纯n-Si探测器与纯CZTS探测器具有更大的电流开关比,为低成本、高性能及环境友好光电探测器提供新方案。
Single phase CZTS films were prepared by single target magnetron sputtering method and CZTS/n-Si heterojunction photodetectors were fabricated. The phase structure, optical properties and surface morphology of the CZTS films were characterized by scanning electron microscope （SEM）,X-ray diffraction （XRD）, Raman spectroscope （Raman） and UV-Vis-NIR spectroscope （UV-Vis-NIR） respectively. CZTS films after annealing were proved to have a single phase structure, a suitable band gap （1.51 eV） and a smooth and dense surface morphology. The photoelectric properties of CZTS/n-Si heterojunction photodetector were investigated in the visible and near infrared regions. The characterization results showed that the device at 450, 635 and 980 nm wavelength all exhibited good rectifying properties. At a bias voltage of 0 V, the response rise time and decay time of CZTS/n-Si heterojunction photodetector were 41 and 126 ms respectively in NIR region （980 nm, 3 mW/cm 2 ）. Besides, under the 450 nm incident laser （3 mW/cm 2） and at the bias voltage of -0.1 V, the CZTS/n-Si heterojunction photodetector displayed a larger current switching ratio than the pure Si detector and the pure CZTS detector due to the improvement of carriers separated efficiency. Therefore, the CZTS/n-Si heterojunction photodetector based on the single target magnetron sputtering method is significant for developing low cost and high performance photodetectors.
作者
林煌丁
刘相志
方浩
周全
张恩亮
严鑫
冷重钱
张风燕
LIN Huangding;LIU Xiangzhi;FANG Hao;ZHOU Quan;ZHANG Enliang;YAN Xin;LENG Chongqian;ZHANG Fengyan(College of Energy,Xiamen University,Xiamen 361005,China;Key Laboratory of Multiscale Manufacturing Technology of Chongqing,Chongqing Institute of Green and Intelligent Technology,Chinese Academy of Sciences,Chongqing 401329,China)
出处
《功能材料》
EI
CAS
CSCD
北大核心
2018年第6期163-167,172,共6页
Journal of Functional Materials
