摘要
Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.
Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.
作者
Rui Wu
Jun-Ling Wang
Gang Yan
Rong Wang
吴锐;王君玲;鄢刚;王荣(Key Laboratory of Beam Technology and Materials Modification (Ministry of Education),College of Nuclear Science and Technology, Beijing Normal University)
基金
Supported by the National Natural Science Foundation of China under Grant Nos 11675020,11375028,11075018 and 10675023
