摘要
基于辅助阳极的电场增强高功率脉冲磁控溅射(Hi PIMS)技术改善了常规Hi PIMS放电及镀膜过程。研究工作参数对电场增强Hi PIMS的调制作用可为该技术的应用提供理论依据。利用数字示波器收集Hi PIMS基体离子电流,分析了不同工作气压、靶基间距、脉冲频率和脉冲宽度等工作参数对基体离子电流的调制作用规律。利用扫描电镜观察了钒膜的截面形貌特征。结果表明:在相同的靶电压下,基体离子电流平均值随工作气压的增加而增加并逐渐达到饱和值;随靶基间距的增加基体离子电流平均值逐渐减小;随脉冲频率的增加基体离子电流平均值逐渐减小后趋于稳定;当脉冲宽度为150μs时的基体离子电流平均值高于脉冲宽度为200μs时的基体离子电流平均值。工作参数对膜层的制备具有调制作用,在适中的工作参数下,电场增强Hi PIMS获得的钒膜与基底结合良好、膜层致密完整。
Herein, we addressed the optimization of film growth conditions of the field enhanced high power impulse magnetron sputtering （HiPIMS） reactor. The influence of the deposition conditions, including but not limited to the pressure, target-substrate distance and pulse width/frequency, on the substrate ion current was investigated with scanning electron microscope and oscilloscope. The results show that the growth conditions all have a major im- pact. For example, the average substrate ion current changed in an increase-leveloff manner with an increase of the pressure at a fixed target voltage,but decreased with an increase of the target-substrate distance;as the pulse frequency increased,it varied in a decrease-constant mode; the average ion current at a pulse-width of 150 μs was higher than that at 200 μs. The dense, compact vanadium coatings with fairly strong interfacial adhesion were grown by field-enhanced HiPIMS under the moderate synthesis conditions.
作者
李春伟
田修波
徐淑艳
郑权
张群利
陈春晟
张旭
Li Chunwei;Tian Xiubo;Xu Shuyan;Zheng Quan;Zhang Qunli;Chen Chunsheng;Zhang Xu(College of Engineering and Technology ,Northeast Forestry University ,Harbin 150040, China;State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China)
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2018年第5期400-406,共7页
Chinese Journal of Vacuum Science and Technology
基金
黑龙江省科学基金项目资助(QC2016053)
关键词
高功率脉冲磁控溅射
辅助阳极
工作气压
靶基间距
钒膜
放电特性
High power impulse magnetron sputtering
Auxiliary anode
Working pressure
Target-substrate distance
Vanadium films
Discharge characteristics
