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Fabrication of rigid and flexible SrGe409 nanotube-based sensors for room-temperature ammonia detection 被引量:1

Fabrication of rigid and flexible SrGe409 nanotube-based sensors for room-temperature ammonia detection
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摘要 Ammonia (NH3) detection at room temperature has attracted considerable attention because of the increasing demand for health monitoring, personal safety protection, and industrial manufacturing. Herein, we report the synthesis of polycrystalline SrGe409 nanotubes (NTs) via an electrospinning process. These NTs are a new sensing material for the detection of ammonia at room temperature. The SrGe409 NTs exhibited a maximum sensing response of 2.49 for 100 ppm NH3, which was increased to 7.08 by decorating the NTs with Pt nanoparticles. Flexible gas sensors were fabricated, which exhibited comparable performance to the rigid device. Additionally, the flexible devices showed excellent flexibility, mechanical stability, and sensing stability under different bending states, manifesting their potential applications in flexible and wearable electronics. Ammonia (NH3) detection at room temperature has attracted considerable attention because of the increasing demand for health monitoring, personal safety protection, and industrial manufacturing. Herein, we report the synthesis of polycrystalline SrGe409 nanotubes (NTs) via an electrospinning process. These NTs are a new sensing material for the detection of ammonia at room temperature. The SrGe409 NTs exhibited a maximum sensing response of 2.49 for 100 ppm NH3, which was increased to 7.08 by decorating the NTs with Pt nanoparticles. Flexible gas sensors were fabricated, which exhibited comparable performance to the rigid device. Additionally, the flexible devices showed excellent flexibility, mechanical stability, and sensing stability under different bending states, manifesting their potential applications in flexible and wearable electronics.
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出处 《Nano Research》 SCIE EI CAS CSCD 2018年第1期431-439,共9页 纳米研究(英文版)
关键词 gas sensors AMMONIA NANOTUBES flexible electronics gas sensors,ammonia,nanotubes,flexible electronics
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  • 1Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666569.
  • 2Schedin, F.; Geim, A. K.; Morozov, S. V.; Hill, E. W.; Blake, P.; Katsnelson, M. I.; Novoselov, K. S. Detection of individual gas molecules adsorbed on graphene. Nat. Mater. 2007, 6, 652-655.
  • 3Hwang, S.; Lira, J.; Park, H. G.; Kim, W. K.; Kim, D.-H.; Song, I. S.; Kim, J. H.; Lee, S.; Woo, D. H.; Jun, S. C. Chemical vapor sensing properties of graphene based on geometrical evaluation. Curr. Appl. Phys. 2012, 12, 1017- 1022.
  • 4Yuan, W.; Shi, G. Graphene-based gas sensors. J. Mater. Chem. A 2013, 1, 10078-10091.
  • 5Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312-1314.
  • 6Bae, S.; Kim, H.; Lee, Y.; Xu, X.; Park, J.-S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H. R.; Song, Y. I.; et al. Roll- to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotechnol. 2010, 5, 574-578.
  • 7Crowther, A. C.; Ghassaei, A.; Jung, N.; Brus, L. E. Strong charge-transfer doping of 1 to 10 layer graphene by NO2. ACSNano 2012, 6, 1865-1875.
  • 8Yavari, F.; Castillo, E.; Gullapalli, H.; Ajayan, P. M.; Koratkar, N. High sensitivity detection of NO2 and NH3 in air using chemical vapor deposition grown graphene. Appl. Phys. Lett. 2012, 100, 203120.
  • 9Nomani, M. W. K.; Shishir, R.; Qazi, M.; Diwan, D.; Shields, V. B.; Spencer, M. G.; Tompa, G. S.; Sbrockey, N. M.; Koley, G. Highly sensitive and selective detection of NO2 using epitaxial graphene on 6H-SiC. Sensor. Actuat. B Chem. 2010, 150, 301-307.
  • 10Kim, C.; Yoo, S.; Nam, D. Effect of temperature and humidity on NO2 and NH3 gas sensitivity of bottom-gate graphene FETs prepared by ICP-CVD. IEEE Electron Device Lett. 2012, 33, 1084-1086.

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