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一氧化硅加速铜氧化的研究

Study on Silicon Monoxide Accelerating the Oxidation of Copper
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摘要 报道了一氧化硅呈现出的表面依赖的化学性质。表面掺杂使一氧化硅加速了铜粉的氧化。通过X-射线粉末衍射半定量分析可知:铜的氧化速率比未加入一氧化硅时增加了近50倍。这一现象赋予了一氧化硅新的应用前景。 This work reported that the silicon monoxide exhibited surface-dependent chemical property. Surface doping accelerated the oxidation of copper. The oxidation rate increased nearly 50 times according to the semi-quantitative X-ray powder diffraction analysis. This phenomenon endowed the silicon monoxide a new application prospects.
作者 邵宇 吴正翠
出处 《安徽化工》 CAS 2018年第1期56-58,共3页 Anhui Chemical Industry
关键词 氧化 一氧化硅 表面掺杂 oxidation Silicon monoxide surface doping Copper
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