摘要
报道了一氧化硅呈现出的表面依赖的化学性质。表面掺杂使一氧化硅加速了铜粉的氧化。通过X-射线粉末衍射半定量分析可知:铜的氧化速率比未加入一氧化硅时增加了近50倍。这一现象赋予了一氧化硅新的应用前景。
This work reported that the silicon monoxide exhibited surface-dependent chemical property. Surface doping accelerated the oxidation of copper. The oxidation rate increased nearly 50 times according to the semi-quantitative X-ray powder diffraction analysis. This phenomenon endowed the silicon monoxide a new application prospects.
出处
《安徽化工》
CAS
2018年第1期56-58,共3页
Anhui Chemical Industry
关键词
氧化
一氧化硅
表面掺杂
铜
oxidation
Silicon monoxide
surface doping
Copper