摘要
以Zn粉与Cu（Ac）_2为主要反应物,采用水热法在新型反应液中制备了Cu_2O纳米薄膜。探讨了Cu（Ac）_2的浓度、十六烷基三甲基溴化铵（CTAB）浓度、NaOH浓度、反应时间和反应温度等制备条件对样品光电性能的影响。结果表明,当反应釜中加入10 mL 0.2 mol/L Cu（Ac）_2溶液、0.5 mL 0.127 mmol/L CTAB和5 mL 0.15 mol/L NaOH溶液,ITO导电玻璃插入反应釜中,置于170℃烘箱中反应6 h时,得到的Cu_2O纳米薄膜具有较高光电压,其值为0.286 6 V。X射线衍射仪（XRD）、能谱仪（EDS）和扫描电子显微镜（SEM）表征结果显示,位于36.441°的（111）晶面和77.417°的（222）晶面分别具有最强衍射峰和最弱衍射峰。以O元素对Cu_2O进行归一化处理后,样品中Cu和O元素的原子数分数分别为54.80%和27.40%,质量分数分别为75.50%和9.50%。Cu_2O样品呈现不规则的削顶多棱锥多面体晶体结构,分散均匀,锥底最大径向宽度为1~2.5μm。
The Cu20 nano-films were prepared by hydrothermal method in a new reaction solution using the Zn powder and Cu（Ac）2 as the main reactants. The effects of the preparation conditions, such as the concentration of Cu（Ac） 2, concentration of cetyltrimethylammonium bromide （CTAB） , concen- tration of NaOH, reaction time and reaction temperature on the photoelectric properties of the sample were investigated. The results show that when 10 mL 0.2 mol/L Cu （Ac）2 solution, 0.5 mL 0. 127 mmol/L CTAB and 5 mL 0. 15 mol/L NaOH solution are added into the reactor, the ITO conductive glass is inserted into the reactor and placed in the oven at 170℃ for 6 h, the Cu20 nano-films are obtained with the highest photovoltage of 0. 286 6 V. The characterization results of the X-ray diffraeto- meter （XRD）, energy dispersive spectrometer （EDS） and scanning electron microscope （SEM） indi- cate that the 36. 441° （ 111 ） crystal faces and 77. 417°（222） crystal faces have the strongest diffraction peaks and the weakest diffraction peaks, respectively. After the normalization of Cu20 with the O ele-ment, the atomic fractions of Cu and O elements in the sample are 54.80% and 27.40%, and the mass fractions of Cu and O are 75.50% and 9.50%, respectively. The Cu20 sample shows irregular polyhedral crystal structure of truncated pyramid. It is dispersed evenly and the maximum radial width at the cone bot-tom is 1-2.5μm.
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第2期142-147,159,共7页
Semiconductor Technology
基金
国家自然科学基金资助项目(61264007,61765005)
关键词
水热法
氧化亚铜(Cu2O)
光电性能
光电压
开路电位
hydrothermal method
cuprous oxide （ Cu20）
photoelectric property
photovoltage
open circuit potential
