摘要
飞行时间二次离子质谱仪(Time of flight secondary ion mass spectrometry,TOF-SIMS)对所有元素具有极高的检测灵敏度,应用此方法研究了经550℃退火处理,Au/AuBe/Au与GaP金属-半导体的各元素强度分布特性,依次分析金属表面、金属层内、金属-半导体界面、半导体内部,使用O2+正离子与Cs+负离子分析Au、Be、O、Ga、P五类元素在各层内的强度,观察金属层与半导体界面内Be、O、Au、P峰位置的各元素SIMS图,表明在金属表面3~10nm内含有Au、Be、O、Ga、P元素,在金属内部,O元素在AuBe层有明显分布,在半导体材料GaP层内含有Be、Au元素,且Be的扩散深度比Au要深,在AuBe层及界面处用XPS分析化学组分。
Time-of-flight secondary ion mass spectrometry（TOF-SIMS）has very high detection sensitivity to all elements.Using this method,we studied Au/AuBe/Au and GaP metal-semiconductor interface after annealing at 550℃,The intensity of the Au,Be,O,Ga and P elements on the surface of the metal layer,inside the metal layer,at the metal-semiconductor interface and inside the semiconductor were analysed successively by using O^2＋ positive ion and Cs＋anion.It can be observed from the Be,O,Au,P peak positions of the elements SIMS map at the metalsemiconductor interface that there exists elements of Au,Be,O,Ga and P within 3-10 nm to the metal surface.There is an obvious distribution of O element inside the AuBe layer within the metal layer.Inside the GaP layer within the semiconductor layer,there contains Be and Au,and the diffusion depth of Be is deeper than that of Au.The chemical composition in the AuBe layer and at the interface was analyzed by XPS.
出处
《固体电子学研究与进展》
CSCD
北大核心
2017年第6期443-450,共8页
Research & Progress of SSE
关键词
飞行时间二次离子质谱仪
退火处理
强度分布
金属-半导体界面
time-of-flight secondary ion mass spectrometer
rapid thermal annealing
intensity distribution
metal-semiconductor interface
