摘要
选择导电炭纸为基底,在炭纸一侧的表面均匀涂覆一层含有催化剂前驱体的炭黑。以二茂铁为催化剂前驱体,二甲苯为碳源,乙二胺为氮源,采用化学气相沉积(CVD)法在炭黑/导电炭纸基底上直接生长定向排列的氮掺杂碳纳米管阵列。利用扫描电子显微镜(SEM)考察了不同的反应温度、反应混合气体的载气比例、碳原子与氮原子的原子比(碳氮比)以及催化剂的浓度等工艺参数对氮掺杂碳纳米管阵列微观形貌的影响。研究表明:当反应温度为850℃,反应混合气体的载气比例为Ar∶H_2=7∶1,碳氮比为20∶1,催化剂浓度为0.05 g/mL时,能够获得定向生长的氮掺杂碳纳米管阵列。在实验的基础上,初步探讨了炭黑/导电炭纸基底上生长氮掺杂碳纳米管阵列的机理。
In this paper, the conductive carbon paper was selected as the substrate, and a layer of carbon black containing catalyst precursor was uniformly coated on the surface of the carbon paper. Nitrogen-doped carbon nanotube array was directly grown with preferred orientation by chemical vapor deposition （CVD） method on carbon black layer/conductive carbon paper substrate with fer- rocene as a catalyst precursor, xylene as a carbon source, and ethylenediamine as nitrogen source. The Influences of different reac- tion temperatures, the carrier gas ratio of the reaction mixture gas, the atomic ratio of carbon to nitrogen ratio and the catalyst con- centration on array microscopic morphology the of nitrogen-doped carbon nanotubes were investigated by scanning electron mi- croscopy （SEM）. The nitrogen doped carbon nanotube arrays with directional orientation were prepared at the reaction temperature of 850 ℃, the carrier gas ratio of the reaction mixture （Ar：H2） of 7：1, the ratio of carbon to nitrogen of 20：1, and the catalyst concentra- tion of 0.05 g/mL. On the basis of experiment, the mechanism of nitrogen-doped carbon nanotube arrays on carbon black layer/con- ductive carbon paper substrate was discussed.
出处
《炭素技术》
北大核心
2017年第6期11-17,共7页
Carbon Techniques
关键词
碳纳米管阵列
氮掺杂
化学气相沉积法
导电炭纸
生长机理
Carbon nanotube arrays
nitrogen doping
chemical vapor deposition
conductive carbon paper
growth mechanism
