摘要
推导了在连续抽运和脉冲抽运条件下 ,利用荧光衰减曲线 ,在双掺与单掺晶体中 ,激发态布居数与激活离子掺杂浓度的关系 ,分析了四能级系统与准四能级系统中激活离子最佳掺杂浓度的计算方法 .并利用上述方法 ,以准四能级系统Tm ,Tb :LiYF4 和四能级系统Nd :YAG为例 ,计算了相应离子的最佳掺杂浓度 。
The population of the active levels in both CW and pulsed regimes as functions of the concentration of the active impurities is deduced by means of the luminescence decay curve.A method is proposed for the determination of the optimal concentration of active impurities with a view to maximizing net transition population from the upper laser energy level to the lower one for the four level and quasi four level system.For the four level system,the optimal concentration of Nd 3+ ion in Nd:YAG is calculated and compared with the experimental results.For the quasi four level system,the optimal concentration of Tm 3+ ,Tb 3+ ions are calculated to be 2.42 at%,0.21 at%for CW regime and 14.14at%,1.82at% for pulsed regime (the width of the pulse being 40 μs)in LiYF 4 crystal.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第9期2002-2010,共9页
Acta Physica Sinica
