摘要
用磁控溅射方法在Si衬底上制备了A1掺杂Mg_2Si薄膜,通过X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和分光光度计研究了掺杂含量对Mg2Si薄膜组分、表面形貌、粗糙度及光学带隙值的影响。XRD结果表明随着A1掺杂量的增加,Mg2Si衍射峰先增强后减弱。SEM及AFM的结果表明随掺杂量的增加,结晶度先增加后降低,晶粒尺寸减小,粗糙度先增加后降低.得到掺杂后薄膜间接跃迁带隙范围为0.423~0.495 eV,直接跃迁带隙范围为0.72~0.748 eV,掺杂前薄膜间接跃迁带隙和直接跃迁带隙分别为0.53 eV、0.833 eV.
The Al-doped Mg2Si thin films on Si substrates are fabricated by magnetron sputtering method. Influences of doping levels on the compositions, surface topographies, roughness and optical band gap values of Mg2Si thin films are investigated with X-ray diffraction （XRD）, scanning electron microscope（SEM）, atomic force microscope（AFM） and spectrophotometer. XRD results show that the diffraction peaks of Mg2Si become stronger firstly, and then become weaker with increasing of A1 doping amount. SEM and AFM results show that the crystallinity increases first and then decreases. Grain size decreases, and the roughness increases first and then decreases with increasing of Al doping level. The indirect transition band gap of the doped films ranges from 0.423 eV to 0.495 eV. The direct transition band gap ranges from 0.72 eV to 0.748 eV. The indirect and direct transition band gap are 0.53 eV and 0.833 eV before doping, respectively.
作者
王善兰
廖杨芳
房迪
吴宏仙
肖清泉
杨云良
谢泉
WANG Shanlan LIAO Yangfang FANG Di WU Hongxian XIAO Qingquan YANG Yunliangl XIE Quan(Institute of Advanced OptoeIectronic Materials and Technology, ColIege of Big Data and Information Engineering Guizhou University, Guiyang 550025, China School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China)
出处
《量子电子学报》
CSCD
北大核心
2017年第5期635-640,共6页
Chinese Journal of Quantum Electronics
基金
国家自然科学基金
61264004
贵州省自然科学基金
[2014]2052
[2013]2209
贵州省国际科技合作项目
[2013]7003
贵州大学研究生创新基金
2016068~~
