期刊文献+

Cu2SnS3薄膜的溶液法制备及表征

Characterization of the Cu_2SnS_3 thin films prepared by solution method
在线阅读 下载PDF
导出
摘要 采用溶液法在玻璃基底上制备了Cu_2SnS_3薄膜,研究了不同退火温度对Cu_2SnS_3薄膜性能的影响,采用X射线衍射仪、拉曼光谱仪、场发射扫描电子显微镜和紫外-可见分光光度计分别表征了薄膜的物相结构、形貌和光学性能.结果表明,退火温度对Cu_2SnS_3薄膜的相结构、形貌及光学性能有显著影响,随着退火温度的升高,薄膜中的晶粒尺寸明显增大,结晶性也有所增加;退火温度为500℃时,可以生成单相的Cu_2SnS_3薄膜;在不同退火温度下所制备薄膜的禁带宽度均接近1.05eV. In this paper,a solution approach for direct synthesizing Cu2SnS3 thin films on the soda lime glass substrate is reported.The effects of the annealing temperatures on Cu2SnS3 thin films are investigated.X-ray diffraction patterns,Raman spectroscopy,field-emission scanning electron microscopy and UV-vis spectroscopy are used to represented the compositional,structural and optical properties.The preliminary results indicate that the grain size and crystallinity increase with increasing of the annealing temperature.Single-phase Cu2SnS3thin film can be synthetized at 500 ℃.All the samples corresponds to a direct band gap of about 1.05 eV.
出处 《西北师范大学学报(自然科学版)》 CAS 北大核心 2017年第5期41-44,共4页 Journal of Northwest Normal University(Natural Science)
基金 国家自然科学基金资助项目(21401203)
关键词 Cu2SnS3薄膜 溶液法 退火温度 Cu2SnS3 thin film solution method annealing temperature
  • 相关文献

参考文献2

二级参考文献29

  • 1杜金会,于振瑞,张加友,王妍妍,李正群.Cu_2SnS_3薄膜的制备及性能研究[J].光电子技术,2004,24(3):151-155. 被引量:2
  • 2Sekhar C.Ray,Malay K.Karanjai,Dhruba DasGupta.Structure and photoconductive properties of dip-deposited SnS and SnS2 thin films and their conversion to tin dioxide by annealing in air[J].Thin Solid Films,1990,350:72-78
  • 3Nair P K,Nair M T S,Garcia V M,et al.Semiconductor thin films by chemical bath deposition for solar energy related applicatons[J].Solar Energy Materials and Solar Cells,1998,52:313-344
  • 4Fernandez A M,Calixto M E,Sebastian P J,et al.Electrodeposited and selenized (CuInSe2)(CIS) thin films for photovolatic applications[J].Solar Energy Materials and Solar Cells,1998,52:423-431
  • 5Savadogo O.Chemically and electrochemically deposited thin films for solar energy materials[J].Solar Energy Materials and Solar Cells,1998,52:361-388
  • 6Katgiri Hironori,Ishigaki Naoya,Ishida Takeshi,et al.Characterization of Cu2ZnSnS4 thin films prepared by vapor phase sulfurizaton[J].Jpn.J.Appl.Phys.,2001,40:500-504
  • 7Takeuchi K,Ichimura M,Arai E,et al.SnS thin films fabricated by pulsed and normal electrochemical deposition[C].Korea:PVSEC-12,2001
  • 8Johanna Johansson,Juhana Kostamo,Maarit Karppinen, et al.Growth of conductive copper sulfide thin films by atomic layer deposition[J].Journal of Materials Chemistry,2002,12:1 022-1 026
  • 9Nair M T,Lopez-Mata C,Gomez Daza O, et al.Copper tin sulfide semiconductor thin films produced by heating SnS-CuS Layers deposited from chemical bath[J].Semicond Sci.Techno.,2003,18:755-759
  • 10Wang W, Winkler M T, Gunawan O, et al. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency [ J ]. Advanced Energy Materials ,2014,4 ( 7 ).

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部