摘要
为了研究静/动态刻蚀过程中熔石英表面质量和抗激光损伤性能的演变规律,优化化学刻蚀工艺,使用HF酸缓冲液对熔石英分别进行了不同时间的静/动态刻蚀处理。实验表明,由于兆声场辅助搅拌作用,熔石英动态刻蚀的刻蚀速率快于静态刻蚀。动态刻蚀后熔石英表面均方根(RMS)粗糙度和反射面形分别为<1nm和0.46λ,其3倍频透射率先小幅增加后保持稳定,相比初始表面增加约0.1%。而静态刻蚀使得表面RMS粗糙度和反射面形分别增加至~5nm和0.82λ,其3倍频透射率先基本不变后下降,相比初始表面下降约0.4%。二者损伤阈值呈现明显不同变化规律:静态刻蚀使熔石英损伤阈值先小幅增加约30%后逐渐降低,动态刻蚀使熔石英损伤阈值增加近一倍后保持相对稳定。结果表明,动态刻蚀后熔石英光学元件性能明显优于静态刻蚀。
In order to investigate evolution rules of surface quality and laser damage resistance performance during static/dynamic etching process, and optimize chemical etching technologies, fused silica were treated by static/dynamic etching for different time respectively using the buff-ered hydrofluoric（HF） acid. Experiment results show that the dynamic etching rate of fused silica is higher than the static etching rate due to megasonic agitation. The surface root-mean- square（RMS） roughness and reflection profile peak valley （PV ） value of dynamically etching surface are〈1 nm and 0. 46λ, respectively, and 355 nm transmission of dynamically etched surface first increases in a small range （0. 1 % ） and subsequently remains steady. Moreover, the surface RMS roughness and reflection profile PV of statically etched surface increase to -5 nm and 0. 82λ,respectively, and the 355 nm transmission of statically etched fused silica first remains basically steady and subsequently decreases by 0. 4 % aproximately. Damage thresholds of fused silica treated by static/dynamic etching present obviously different changement laws： the damage thresholds of fused silica increase by about 30% and then decrease gradually during static etching, while that increase by about 100% and then keep relatively steady during dynamic etching. The results above show that the properties of fused silica optics treated by dynamic etching are significantly better than that of static etching.
出处
《应用光学》
CAS
CSCD
北大核心
2017年第5期837-843,共7页
Journal of Applied Optics
基金
国家自然科学基金(51535053)
青年科学基金(11404301
61405180)
关键词
激光光学
熔石英
化学刻蚀
动态刻蚀
激光诱导损伤
laser optics
fused silica
chemical etching
dynamic etching
laser-induced damage
