摘要
GaN晶体管相对于MOSFET器件有更小的导通电阻和栅电荷,在高速、高功率密度应用中独具优势。但增强型GaN器件存在自身独特的物理特性,包括最大栅压限制、阈值电压偏低和存在反向导通电压等。因此,栅驱动电路需要针对器件特性进行定制化设计。在此首先重点分析GaN器件在高速开关过程中存在的主要问题及解决方案,然后详细描述基于HHNEC 0.35μm CD工艺设计完成的一款80 V高压半桥GaN栅驱动电路,验证相关驱动技术的正确性。由仿真和测试结果可见,驱动信号具有良好的延迟特性和小的电压过冲,能够很好地满足相关应用需求。
Compared to MOSFET devices, GaN transistors can achieve smaller on resistance and gate charge, which is especially suitable for high frequency and high power density applications.However,enhancement-mode GaN device has its own unique physical properties,including the limited maximum allowable gate voltage,small gate threshold voltage and the ＂body diode＂ voltage drop.These characteristics require a special gate drive design for this kind of devices.The main problems as well as useful solutions for driving GaN are expressed clearly, then an 80 V gate driver fabricated in HHNEC 80 V CD process is introduced to prove the correctness of the relevant driving technology.Based on the simulation and experimental results,the circuit appears small propagation delay,delay matching and voltage spikes, meeting the application requirements well.
出处
《电力电子技术》
CSCD
北大核心
2017年第8期75-78,共4页
Power Electronics
基金
国家自然科学基金资助项目(61404020)
广东省自然科学基金资助项目(2014A030310407)~~
关键词
功率器件
抗干扰
共源端电感
power devices
immunity
common-source inductance
