摘要
基于静态腐蚀试验和Arrhenius公式,探讨了缓蚀剂1,2,4-三唑在铜晶圆表面的吸附机制,分析了其对铜晶圆表面化学反应活化能的影响;结合CMP试验,阐释了BTA和1,2,4-三唑两种缓蚀剂对CMP材料去除速率的影响.结果表明:在酸性抛光液中,缓蚀剂1,2,4-三唑主要存在两种缓蚀机制:一是在铜表面形成吸附膜Cu:(1,2,4-TAH)_(ads),二是形成聚合物膜Cu(1,2,4-TA)_2.CMP过程中化学反应活化能的降低量不随抛光液中1,2,4-三唑的含量而变化.但是相对于BTA,使用含有1,2,4-三唑的抛光液时CMP过程中晶圆表面的化学反应活化能降低量较大,表明机械促进化学作用较强.本研究结果为CMP过程中抛光液的优化提供了理论支撑.
Based on the static corrosion tests and Arrhenius equation, the inhibition efficiency and adsorption mechanism of 1,2,4-triazole were studied. Besides, the effect of 1,2,4-triazole on the activation energy of wafer surface was analyzed. Combining with chemical mechanical planarization （CMP） experiments, the effect of BTA and 1,2,4-triazole on material removal rate during CMP process was investigated. It is found that the two inhibition mechanisms of 1,2,4- triazole involved, i.e. the formation of physisorption or chemisorption layer on the surface and the formation of a polymeric film of Cu（1,2,4-TA）2. The reduction amount of activation energy during CMP was independent on the concentration of 1,2,4-triazole in slurry. The reduction amount of activation energy during CMP using slurry containing 1,2,4-triazole was larger than that using slurry with BTA, which indicated stronger mechanically induced chemical effect. The results are useful for optimizing component of the CMP slurry.
出处
《摩擦学学报》
EI
CAS
CSCD
北大核心
2017年第3期333-339,共7页
Tribology
基金
国家自然科学基金项目(51405511)
中央高校基本科研业务费专项资金(16CX02005A)资助~~
