摘要
设计了3 300V/50A的软穿通型IGBT芯片(SPT IGBT),利用数值仿真软件MEDICI对其各项特性进行了仿真研究,包括静态特性、开关特性、动态雪崩特性、短路特性、电容特性和闩锁特性,在满足设计需求的同时重点进行动态失效特性仿真,验证了该器件的可靠性。仿真结果显示,器件的额定工作电流为50A、正向阻断电压为4 178.8V、阈值电压VTH为7.8V、导通压降为2.67V、短路电流为857A、工作电流为100A时的雪崩耐量为1.755J。利用局域载流子寿命控制的方法对器件进行优化后,器件的正向阻断电压仍为4 178.8V,导通压降为4.13V,没有明显的改变,关断时间由6 725.75ns降低到了1 006.49ns,关断速度提高了568%,大大提高了器件的性能,降低了损耗。
A 3 300 V/50 A soft punch through insulated gate bipolar translator （SPT IGBT） was designed in this paper. And a numerical tool MEDICI was utilized to research the characteristics of the SPT IGBT, including static characteristics, switching characteristics, dynamic avalanche characteristics, short circuit characteristics, capacitance characteristics and latch charac- teristics. Dynamic failure characteristics simulation was given priority in order to ensure the reliability of the device. Simulation results show that the SPT IGBT can achieve rated operating current of 50 A, forward blocking voltage of 4 178.8 V, threshold voltage （VTH） Of 7. 8 V, forward voltage drop of 2.67 V, short circuit current of 857A, and avalanche tolerance of 1. 755 J at 100 A of working current. A method of controlling the lifetime of local carriers is proposed to optimize the SPT IGBT, making the turn-off time drop from 6 725.75 ns to 1 006.49 ns, which means switching loss is significantly reduced.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2017年第1期45-51,共7页
Research & Progress of SSE
基金
国网科技项目(SGRI-WD-71-14-005)
国家高科技发展研究计划(863计划)资助项目(No.2014AA052401)
关键词
高压大电流
软穿通型绝缘栅双极型晶体管
动态失效
快速
局域载流子寿命
high-voltage high-current
soft punch through insulated gate bipolar translator
dynamic failure
fast
local carrier lifetime
