摘要
幅相多功能芯片是相控阵雷达的关键部件。为了降低前端收发组件的尺寸和成本,本文采用0.13μm SiGe BiCMOS工艺设计了一款Ku波段幅相多功能芯片,单片集成了接收通道和发射通道,芯片面积2.5 mm×4.5mm。研制的多功能芯片的接收通道含前端低噪声放大器、六位数控衰减器、驱动放大器、单刀双掷开关、六位数控移相器;发射通道含六位数控移相器、单刀双掷开关、驱动放大器、中功率放大器。此外,为了进一步提高芯片的集成度,采用片上集成的电源管理单元和数字逻辑单元实现电源电压变换、衰减器和移相器的逻辑控制以及收发通道切换等功能。实测结果表明:在f1~f2(1GHz带宽)频带内,实现了发射增益17dB,发射功率(Psat)21.7dBm;接收增益-3dB,接收输入功率(P-1)-8.5dBm,接收噪声系数6.5dB;5.625°移相步进,移相精度(RMS)4.5°;0.5dB衰减步进,衰减精度(0.3dB+7%AS)。
Multi-function chip with phase and amplitude control is critical component in phased array radars. In order to decrease the size and cost of the front-end transceiver modules, a fully integrated multi-function chip for Ku-band applications based on a 0.13 μm SiGe BiCMOS technology was designed in this paper. The chip size is 2.5 mm× 4.5 mm, integrated with both receiver channel and transmitter channel. The presented chip contained a low-noise amplifier, a 6-bit digital attenuator, a drive amplifier, a single pole double throw switch （SPDT） and a 6-bit digital phase shifter in the receiver path and a 6-bit digital phase shifter, a SPDT, a drive amplifier and a power amplifier in the transmitter path. Furthermore, in order to improve the chip＇s integration, the power management function and the digital logic function was integrated to realize the voltage conversion, logic control of the phase shifter and the attenuator, and channel switching. The measured results across 1 GHz bandwidth show. a 17 dB small signal gain, a 21.7 dBm output power Psat for the transmitter part and a -3 dB small signal gain, a -8.5 dBm input power P-1, and a 6.5 dB noise figure 4.5° RMS and a 0.5 dB amplitude step with for the receiver part, and a 5. 625° phase step with （0.3 dB＋7% AS） RMS.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2017年第1期15-20,共6页
Research & Progress of SSE
