摘要
设计了一种应用于无线传感网的低功耗宽带低噪声放大器。通过使用电容交叉耦合的共栅放大器结构来提高增益,同时实现宽带输入阻抗匹配。运用PMOS和NMOS层叠结构实现电流复用,降低了功耗。该低噪声放大器采用0.18μm SMIC CMOS工艺设计。后仿真结果表明,该放大器在1.8V电源供电下的功耗仅为0.712mW,在3dB带宽0.043~1.493GHz范围内的峰值增益为20.44dB,最小噪声系数为4.024dB,输入3阶交调点为-3.73dBm。
A low power wideband low noise amplifier （LNA） designed for wireless sensor network applications was proposed. The common gate amplifier topology with cross-coupling capacitor was adopted to boost the gain, and the input impedance matching for wideband was realized. Current reusing by stacking PMOS and NMOS structure was utilized to reduce the power consumption. The proposed LNA was designed in the 0.18μm SMIC CMOS process. It consumed 0. 712 mW at 1.8 V supply. The LNA achieved a peak gain of 20.44 dB within the 3 dB bandwidth of 0. 043-1. 493 GHz. It had a minimum noise figure of 4. 024 dB and an input-referred third-order intercept point （IIP3） of --3.73 dBm.
出处
《微电子学》
CAS
CSCD
北大核心
2017年第1期35-39,共5页
Microelectronics
基金
国家自然科学基金资助项目(61474135)
