摘要
通过分子束外延生长方法,在GaAs(001)衬底上制备生长12周期,16周期,20周期的InGaAs/GaAs量子点,分析了多周期生长的InGaAs/GaAs量子点在16周期下出现较好分布的机理。以及在生长16周期的InGaAs/GaAs量子点下,分析了未退火和退火的初始表面对于量子点分布的影响,未退火处理的衬底生长的InGaAs/GaAs量子点分布更加均匀且有序,量子链延伸得更长。
The InGaAs/GaAs quantum dots （Q-dots） and/or quantum chains were synthesized by molecular beam epitaxy （MBE） on the GaAs （001） substrate pre-coated with a GaAs transition layer. The influence of the pre-annealing of the GaAs substrate and cycles （ 12,16 and 20 cycles, respectively） of monolayer deposition on the Q-dots＇ uniformity and distribution was theoretically analyzed and experimentally evaluated with scanning tunneling microscopy （STM）. The preliminary results show that the deposition cycle and pre-annealing of substrate had a ma- jor impact on the Q-dots distribution and formation of quantum chains. To be specific, grown in an optimized 16 cy- cles,the most uniform Q-dots displayed a highly-ordered distribution, possibly because of the interlayer stress and anisotropy of surface properties. Besides, the highly-ordered uniform Q-dots preferentially grew at the steps and pits on the surface of un-annealed substrate, and some Q-dots formed fairly long quantum chains.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2016年第12期1413-1417,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(61564002)
贵州省自然科学基金项目(黔科合J字[2013]2114号
黔科合J字[2014]2046号)
贵州省教育厅自然科学研究项目(黔科合KY字[2014]265号)
