摘要
为了能够有效地提高电子的注入和传输能力,改善有机电致发光器件的性能,本文利用CsN_3作为n型掺杂剂,对有机电子传输材料Bphen进行n型电学掺杂,制备了结构为ITO/MoO_3(2nm)/NPB(50nm)/Alq_3(30nm)/Bphen(15nm)/Bphen∶CsN_3(15nm,x%,x=10,15,20)/Al(100nm)的器件。实验结果表明,CsN_3是一种有效的n型掺杂剂,以掺杂层Bphen∶CsN_3作为电子传输层,可以有效地降低电子的注入势垒,改善器件的电子注入和传输能力,从而降低器件的开启电压,同时提高了器件的亮度和发光效率。在掺杂浓度为10%时器件的性能最优,开启电压仅为2.3V,在7.2V的驱动电压下,达到最大亮度29 060cd/m^2,是非掺杂器件的2.5倍以上。当驱动电压为6.6V时,达到最大电流效率3.27cd/A。而当掺杂浓度进一步提高时,由于Cs扩散严重,发光区形成淬灭中心,造成器件的效率下降。
To enhance the electron injecting and transporting ability and improve the performance of organic light-emitting device,the organic electron transport material Bphen was electrically doped by using CsN3 as n-type dopant in this work. The devices of ITO/MoO3 （2 nm）/NPB（50 nm）/Alq3 （30 nm）/Bphen（15 nm）/Bphen.-CsN3 （15 nm, x %,x=10,15,20）/Al（100 nm） were prepared. The ex- perimental results show that the CsNa is an effective n-type dopant. The electron injection barriers was reduced and the electron injecting and transporting ability of the device was enhanced by using the Bphen：CsN3 doped electron transport layer. As a result, the turn-on voltage was decreased, and the brightness and the luminous efficiency of the device were improved.The optimal doping concentrationof the device was 10G.The device shows a turn-on voltage of 2.3 V and the maximum luminance rea- ches 29 060 cd/m2 at 7.2 V, more than 2.5 times of that of the device without doping. The maximum current efficiency was 3.27 cd/A when the voltage was 6.6 V. When the doping concentration further increases,the efficiency of the device is decreased owning to Cs atom quenching the luminescence cen- ter induced by interdiffusion.
出处
《液晶与显示》
CAS
CSCD
北大核心
2016年第8期773-777,共5页
Chinese Journal of Liquid Crystals and Displays
基金
国家自然科学基金资助项目(No.61404053)~~
