摘要
作为现代电力电子核心器件之一的P沟道VDMOS(vertical double-diffuse,MOS)器件,一直以来由于应用领域狭窄而并未得到足够的研究。以P沟道VDMOS器件为研究对象,为一款击穿电压超过-200V的P沟道VDMOS设计了有源区的元胞结构及复合耐压终端结构,并开发了一套完整的P沟道VDMOS专用非自对准工艺流程。最后通过仿真得到器件的击穿电压超过-200V,阈值电压为-2.78V,完全满足了设计要求,也为下一步流片提供了有益的参考。
As one of core devices in modern power semiconductor, P-channel VDMOS device has not been well researched for its narrow applications. We focused on the development of P-channel VDMOS device, designed a P-channel VDMOS with breakdown voltage over -200 V, including the active region cell structure and the junction termination structure, and developed a non-self-aligned progress flow for P channel VDMOS. Simulation results show that the breakdown voltage of the device is over -200 V and the threshold voltage is -2.78 V. The results meet the design requirements, and the research can provide references for the device fabrication.
出处
《重庆大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2016年第4期133-138,共6页
Journal of Chongqing University
基金
国家自然科学基金资助项目(61106106)
中央高校基本科研业务费专项基金(K5051325002
K50511250008)~~
