摘要
光学常数（折射率和消光系数）是聚合物半导体薄膜器件结构设计和性能优化的重要参数。借助于ForouhiBloomer（F-B）色散模型,通过拟合P3HT：PCBM、MEH-PPV：PCBM体异质结薄膜以及聚合物导电薄膜PEDOT：PSS的反射率,计算得到其光学常数和厚度,拟合得到的反射率曲线和实验曲线符合良好。厚度拟合结果与表面轮廓仪测量结果误差小于3%。基于该方法,进一步分析了热退火对P3HT：PCBM薄膜表面形貌和光学常数的影响。研究结果表明,P3HT：PCBM薄膜在110℃退火后,折射率在550～700 nm波长范围内的峰值由1.95上升到2.16,同时,消光系数的峰值波长向长波长方向移动。
Optical constants, refractive index and extinction coefficient, are significant parameters for structure design and performance optimization of polymer semiconductor thin films. We fitted the reflectivity curves of three kinds of polymer semiconductor films, such as P3HT：PCBM, MEH-PPV：PCBM and PEDOT：PSS, with the ForouhiBloomer（F-B） dispersion model, and got their optical constants and thickness. The fitted reflectance curves agree well with the experimental results. The thickness mismatch between the fitting and measurement results is less than3%. Based on this method, the influence of thermal annealing on surface morphology and optical constants of the P3HT：PCBM film is analyzed. After the thermal annealing process at 110 °C, the maximum refractive index of P3HT：PCBM increases from 1.95 to 2.16 in the wavelength range from 550 nm to 700 nm, and the extinction coefficient peak shifts to the longer wavelength end.
出处
《激光与光电子学进展》
CSCD
北大核心
2016年第4期247-252,共6页
Laser & Optoelectronics Progress
基金
宁夏大学自然科学研究基金(ZR1236)
