摘要
研究了铜互连层在化学机械平坦化(CMP)后表面残余缺陷的去除机理,并采用以碱性螯合剂(FA/OⅡ型)和非离子表面活性剂(FA/OⅠ型)为主的碱性清洗液清洗其表面,然后用缺陷检测系统和扫描电镜分析清洗后的表面,以检测不同浓度清洗液的清洗效果。其中螯合剂和活性剂对各种表面缺陷的去除有着不一样的功效,体积分数0.02%的FA/OⅡ型螯合剂和体积分数0.04%FA/OⅠ型活性剂混合组成的复合清洗液能够减少表面缺陷总数至724颗,使残余缺陷总数接近工业应用的要求。最后,通过原子力显微镜检测清洗后的铜表面状态,发现该复合清洗液可以很好地减小抛光后铜表面的粗糙度。
The removal mechanism of surface residual defects after copper interconnection chemical mechanical planarization（CMP）was studied.The alkaline cleaning solution mainly including the alkaline chelating agent（FA/O Ⅱ type）and the non-ionic surfactant（FA/O Ⅰ type）was used to clean the copper interconnection surface,and the cleaned surface was analyzed by the defect inspection system and scanning electron microscopy to test the cleaning effects of cleaning solutions with various concentrations.The alkaline chelating agent and surfactant have different functions on the surface defect removal.The compound cleaning solution composed of FA/O Ⅱtype alkaline chelating agent with the volume fraction of 0.02% and FA/O Ⅰ type surfactant with the volume fraction of 0.04% can greatly reduce the total number of the surface defects to724,being close to the requirements of industrial application.Finally,the surface state of Cu was measured by the atomic force microscope.The result shows that the compound cleaning solution can greatly improve Cu surface roughness after cleaning.
出处
《微纳电子技术》
北大核心
2016年第1期48-53,共6页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308-003
2014ZX02301003-007)
河北省自然科学基金资助项目(F2015202267)
关键词
铜互连层
碱性螯合剂
表面活性剂
缺陷去除
表面粗糙度
copper interconnection
alkaline chelating agent
surfactant
defect removal
surface roughness
