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碳热还原氮化制度对TiN薄膜制备影响的研究

Effect of Carbonthermal Reduction Nitridation Process on Synthesis of TiN Films
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摘要 以四氯化钛乙醇溶液为钛源,聚乙烯吡咯烷酮(PVP)为碳源,采用碳热还原氮化技术制备氮化钛薄膜。利用XRD、FE-SEM和UV-VIS-NIR研究了合成温度和保温时间对氮化钛薄膜显微结构和光学性能的影响。结果表明,当合成温度为1250℃时,薄膜物相仍为金红石型TiO_2和Ti_3O_5;合成温度为1300℃时,薄膜为单一氮化钛物相,氮化钛颗粒呈典型的三角锥型。保温时间为5 h时,薄膜中氮化钛晶体发育更明显,薄膜在近红外区域的反射率可达70%,但保温时间延长到7 h时,薄膜中物相转变为碳化钛,石英玻璃基体中还析出了方石英。 The TiN films were prepared by carbonthermal reduction nitridation method using titanium tetrachloride anhydrous ethanol solution as titanium source and polyvinylpyrrolidone (PVP) as carbon source. The effects of synthesis temperatures and soaking time on microstructures and optical properties of TiN films had been studied by XRD, FE- SEM and UV-VIS-NIR. The result shows that the crystalline phases of thin films are rutile and Ti305 when the synthesis temperature is 1250 ℃ . When the synthesis temperature is 1300 ℃ , the thin films are pure TiN phase, and TiN crystals are shape of typical three pyramid. When the soaking time is 5 h, TiN crystals in the films grow better, and the reflectance of the films is 70% in the near-infrared range. But when the soaking time is 7 h, the crystalline phase of thin films transforms into TiC, and cristobalite crystallizes are precipitated from glass substrates.
出处 《中国陶瓷》 CAS CSCD 北大核心 2016年第2期21-25,共5页 China Ceramics
基金 国家自然科学基金(51272066) 中国科学院特种无机涂层重点实验室开放课题基金(KLICM-2011-01) 河北省自然科学基金(E2013209183) 河北省高等学校科学技术研究青年基金资助项目(2011124)
关键词 碳热还原氮化 氮化钛 薄膜 Carbonthermal reduction nitridation Titanium nitride Films
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参考文献11

  • 1张涛,赵高凌,韩高荣.TiN镀膜玻璃的常压化学气相沉积法制备及其光电性能研究[J].真空科学与技术学报,2005,25(4):309-311. 被引量:8
  • 2Lawand N S,French P J,Briaire J J,et al.Thin titanium nitride films deposited using DC magnetron sputtering used for neural stimulation and sensing purposes[J]. Procedia Engineering,2012,47:726- 729.
  • 3Tian X B,Wang L P,Ricky K Y,et al.Bias voltage influence on surface morphology of titanium nitride synthesized by dynamic nitrogen and titanium plasma immersion ion implantation and deposition[J].Materials Scienee and Engineering A,2002,337(1-2):236 -240.
  • 4Joseph L K,Li J, James W M,et al.gffect of nitridation rate on the composition and conductivity of titanium nitride films prepared from Sol Gel titania[J]. Journal of the American Chemical Society, 1991,74(11 ): 2937-2940.
  • 5Kamiya K,Nishijima T,Tanaka K.Nitridation of the sol-gel derived titanium oxide films by heating in ammonia gas[J]. Journal of the American Ceramic Society, 1990,73(9): 2750-2752.
  • 6Kohno K.Nitridation of the sol gel derived TiO2 coating films and the infrared ray reflection[J]. Journal of Materials Science, 1992,27(3) : 658-660.
  • 7姜洪波,高濂,李景国.直接氮化法制备纳米晶TiN薄膜[J].无机材料学报,2003,18(2):495-499. 被引量:4
  • 8Li J Y,Sun Y,Tan Y,et al.Zirconitun nitride(ZrN)fibers prepared by carbothermal reduction and nitridation of electrospun PVP/zirconium oxychloride composite fibers[J]. Journal of Materials Science,2008,144(1):149 -152.
  • 9Komzka H,Kajimura M,Hirano T,et al. grack free, thick ceramic coating films via non-repetitive dip coating using polyvinylpyrrolidone as stress-relaxing agent[J]. Journal of Sol-Gel Science and Technology,2000,19:205-209.
  • 10Lyubimoy V D,Shstakoca T V,Shveikin G P.High temperature reaction of titanium dioxide with carbon in nitrogen[J].Izv.Akad. Nauk SSSR,Neorg. Mater., 1997,13 :58-62.

二级参考文献14

  • 1[1]Sugiyama K. Fine ceramics, Edited by: Saito S.Elsevier ohmsha, New York and Tokyo, 1988. 62-71.
  • 2[2]Irie M, Ohara H, et al. Materials Chemistry and Physics, 1998, 54: 317-320.
  • 3[3]Konyashin I, et al. J. Mater. Sci., 1997, 32: 6029-6038.
  • 4[4]Berry A, et al. Thin Solid Film, 1998, 323: 10-17.
  • 5[5]Wen L S, Gong J, Yu B H, et al. Nanocomposite multilayer titanium nitride films, C-MRS Int. Symp.Proc., Meeting Date 1990, Edited by:Huang, Liji. 1991, 4: 219-222.
  • 6[6]Inoue A, Kim B G, Nosaki K, et al. J. Mater. Sci. Lett., 1992, 11(12): 865-867.
  • 7[7]Bae Y W, Lee W Y, Besmann T M, et al. Appl. Phys. Lett., 1995, 66(15): 1895-1896.
  • 8Weber A,Poeckelmann R,Klages C P.Microelectronic Engineering,1997,33:277~282.
  • 9Ting C Y.J Vac Sci Technol,1982,21:14.
  • 10Wittmer M.Appl Phys Lett,1980,37:540.

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