摘要
Transport phenomena, namely electrical properties of n-type crystals of InAs and InP solid solutions were investigated in the temperature range 4.2-300 K before and after irradiation with fast neutrons and electrons. Maximum integral fluence of fast neutrons was 2× 1018 n.cm2. At the irradiation with 3 MeV electrons, the integrated electron fluence was 5 × 1017 e·cm2. We show that point type defects play an important role in the radiation processes. They are effective scattering centers of charge carriers in lnAs, InP and InPxASl.x solid solutions irradiated with 3 MeV energy electrons, especially for InAs-rich solid solutions. The charge carriers scattering mechanisms and accordingly the values of mobility are defined by disordered regions in samples irradiated with fast neutrons. The presence of minimum mobility value in composition dependence of mobility disappears after fast neutrons irradiation, which indicates that the contribution of ＂alloy＂ scattering is negligibly small in crystals irradiated with fast neutrons at both room and low temperatures.
