摘要
以APD-PIN结电容平衡门控猝灭电路(GPQC)和InGaAs/InP雪崩光电二极管(APD)为核心研制了可工作在宽门控频率范围下的近红外单光子探测器。门控信号为200 MHz以下任意重复频率的尖脉冲,门宽约1 ns,脉冲幅度约10 Vpp。采用与APD结电容特性相近的PIN高频二极管研发了APD-PIN结电容平衡门控猝灭电路,可有效地抑制门控微分噪声中的低频分量,抑制比大于40 d B。采用一组简单的9阶贝塞尔型电感-电容(LC)低通滤波电路滤除残余的高频噪声分量,并使用通用的宽带射频放大器对雪崩信号进行放大。在-52℃,0.1~200 MHz门控频率条件下,10%探测效率时暗计数率、后脉冲概率分别小于6×10^(-6)/gate、1.9%,最高探测效率可达26.4%。
An NIR band single-photon detector（SPD）, based on GPQC with balanced APD-PIN junction capacitance and InGaAs/InP avalanche photodiode, was designed which was able to work in wide gating frequency range. The SPD was driven by a pulsed gate signal of any frequency below 200 MHz, which had amplitude of 10 Vpp and pulse duration of approximately 1 ns. A novel GPQC was devised based on high-frequency PIN diode that had similar capacitive characteristics compared with APDs, such that the low-frequency portion of capacitive response of the APD was suppressed. Subsequently, a group of 9th ordered Bessel LC low-pass filters （LPF） were used to suppress the residual high-frequency portion. At the temperature of-52 ℃ and gating frequency ranged from 0.1-200 MHz, the dark count probability and afterpulse probability at detection efficiency of 10% were below 6×10-6/gate, 1.9%, respectively, and the highest detection efficiency reached 26.4%.
出处
《红外与激光工程》
EI
CSCD
北大核心
2015年第11期3181-3185,共5页
Infrared and Laser Engineering
基金
山东大学自主创新基金(2012GN04)
