期刊文献+

The investigation on sensitive mapping of memory cell in microprocessor

The investigation on sensitive mapping of memory cell in microprocessor
原文传递
导出
摘要 The single event effects of the sensitivity of a circuit are investigated on a 32-bit microprocessor with a five-stage instruction pipeline by pulsed laser test. The investigation on sensitive mapping of the memory cell is illustrated and then the comparison between the sensitive mapping and the layout of the circuit is made. A comparison result indicates that the area of the sensitive node in sensitive mapping is just the location of the drain in the layout. Therefore, SEE sensitivity in sensitive mapping fits well with that in the physical layout of functional units, which can directly and objectively indicate the size and distribution of sensitive areas. The investigation of sensitive mapping is a meaningful way to verify the hardened effect and provide a reference for improving hardened design by combining with the physical layout. The single event effects of the sensitivity of a circuit are investigated on a 32-bit microprocessor with a five-stage instruction pipeline by pulsed laser test. The investigation on sensitive mapping of the memory cell is illustrated and then the comparison between the sensitive mapping and the layout of the circuit is made. A comparison result indicates that the area of the sensitive node in sensitive mapping is just the location of the drain in the layout. Therefore, SEE sensitivity in sensitive mapping fits well with that in the physical layout of functional units, which can directly and objectively indicate the size and distribution of sensitive areas. The investigation of sensitive mapping is a meaningful way to verify the hardened effect and provide a reference for improving hardened design by combining with the physical layout.
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第11期44-47,共4页 半导体学报(英文版)
关键词 single event effects memory cells MICROPROCESSOR sensitive mapping single event effects memory cells microprocessor sensitive mapping
  • 相关文献

参考文献4

  • 1Melinger J S, Buchner S, McMorrow D. Crirical evaluation of the pulsed laser method for single event effects testing and fun- damental studies. IEEE Trans Nucl Sci, 1994, 41(6): 2574.
  • 2Jones R, Chugg A M, Jones C M S, et al. Comparison between SRAM SEE cross-sections from ion beam testing with those ob- tained using a new picosecond pulsed laser facility. IEEE Trans Nucl Sci, 2000, 47(3): 539.
  • 3Lei Zhifeng. Single event effects test for CMOS devices us- ing 1064 nm pulsed laser. International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, Xi'an, China, 2011:325.
  • 4Feng Guoqiang, Shangguan Shipeng, Ma Yingqi, et al. SEE char- acteristics of small feature size circuits by using laser backside testing. Journal of Semiconductors, 2012, 33(1): 014008.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部