摘要
为了表征所制备的L波段通孔型AlN薄膜体声波谐振器(FBAR)的性能,使用射频探针台和矢量网络分析仪测得FBAR的S参数,扫频步长为1 MHz;为了避免使用3 dB带宽法计算FBAR Q值产生的较大误差,采用阻抗相位微分法,在ADS软件环境下计算出FBAR的Q值。比较实测的S参数及Mason模型仿真得到的S参数发现:采用低阻硅衬底会使FBAR的Q值降低;制备的FBAR中膜层的偏厚会使其谐振频率向低处漂移。制备的性能较好的FBAR,其串联谐振频率为1.509 GHz,Q值为60.4,并联谐振频率为1.523 GHz,Q值为523.4,有效机电耦合系数为2.25%。给出的FBAR片上测试与性能表征方法具有通用性。
Using the RF probe station and vector network analyzer with the sweep frequency step of 1 MHz,the Sparameters of the film bulk acoustic resonator（FBAR）were measured to characterize the performances of the fabricated L-band via-hole type AlN FBAR.With the ADS software,the Q value of the FBAR was calculated by the impedance phase differential method to avoid big error of the Qvalue calculated by 3 dB bandwidth method.Comparing the measured S parameters with the simulated Sparameters by the Mason model,it is found that the Qvalue of the FBAR decreases by using the low resistivity silicon substrate,the resonant frequency of the fabricated FBAR shifts down due to the film thickness error.The series and parallel resonant frequencies of the fabricated FBAR with good properties are 1.509 and 1.523 GHz,respectively,and the relative Qvalues are 60.4 and 523.4,respectively,and the effective electro-mechanical coupling coefficient is 2.25%.The measurement and characterization methods of the FBAR have commonality.
出处
《微纳电子技术》
CAS
北大核心
2015年第10期660-665,共6页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61574131)
中国工程物理研究院超精密加工技术重点实验室基金资助项目(2014ZA001)
西南科技大学特殊环境机器人技术四川省重点实验室开放基金资助项目(14zxtk01)
重庆大学新型微纳器件与系统技术国防重点学科实验室访问学者基金资助项目(2013MS04)
中国工程物理研究院电子工程研究所创新基金资助项目(S20141203)
西南科技大学研究生创新基金资助项目(15ycx122
15ycx123
15ycx125)
关键词
薄膜体声波谐振器(FBAR)
品质因数
有效机电耦合系数
射频探针台
矢量网络分析仪
低阻硅
film bulk acoustic wave resonator（FBAR）
quality factor
effective electro-mechanical coupling coefficient
RF probe station
vector network analyzer
low resistivity silicon
