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Vacuum Sensitivity of Photovoltage of AlGaAs/GaAsMultiple Quantum Wells

Vacuum Sensitivity of PhotovoItage of AlGaAS/GaAs MuItiple Quantum Wells
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摘要 Abstract: The photovoltage spectra of AlGaAs/GaAs multiple quantum wells at different vacuum have been measured and the vacuum sensitivity of photovoltage is re-ported. The experimental results show that the photovoltage decreases in a step - like manner at 105 Pa and increases in a sept - like manner at 0.1 Pa. It is believed that the variation of photovoltage with vacuum is due to the action of oxygen atoms adsorbing at the surface of AlGaAs/GaAs multiple quantum wells structure. Abstract: The photovoltage spectra of AlGaAs/GaAs multiple quantum wells at different vacuum have been measured and the vacuum sensitivity of photovoltage is re-ported. The experimental results show that the photovoltage decreases in a step - like manner at 105 Pa and increases in a sept - like manner at 0.1 Pa. It is believed that the variation of photovoltage with vacuum is due to the action of oxygen atoms adsorbing at the surface of AlGaAs/GaAs multiple quantum wells structure.
出处 《Semiconductor Photonics and Technology》 CAS 1997年第1期14-19,34,共7页 半导体光子学与技术(英文版)
基金 Fujian Natural Science Foundation
关键词 Quantum Well PHOTOVOLTAGE VACUUM 量子阱 砷化镓 铝镓砷化合物 AlGaAs/GaAs 真空
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