摘要
Abstract: The Raman scattering spectra of n- type GaP(doped S) single crystal and red and green luminous materials grown on the n - type GaP (doped S) single crys-tal substrate by liquid - phase epitaxy are analyed. The results show that the spectra of GaP single crystal and its luminous materials include not only the first - order longitudi-nal optical photons and transverse optical phonons Raman scattering peaks, but also the peaks of the bound excitons, bound electrons and bound holes.
Abstract: The Raman scattering spectra of n- type GaP(doped S) single crystal and red and green luminous materials grown on the n - type GaP (doped S) single crys-tal substrate by liquid - phase epitaxy are analyed. The results show that the spectra of GaP single crystal and its luminous materials include not only the first - order longitudi-nal optical photons and transverse optical phonons Raman scattering peaks, but also the peaks of the bound excitons, bound electrons and bound holes.
基金
National Natural Science Foundation of China
