摘要
VGF法可实现晶体生长条件可控,晶体重复性好,所生长晶体尺寸大、位错密度低、应力小,是一种很有前景的晶体生长方法。本文综述了VGF法生长半导体晶体、数值模拟和磁场应用的国内外研究进展。
As VGF method has the advantages of accurate control and high repeatability, in addition, a single crystal with large diameter,low dislocation density and small tress can be growth by VGF method, it has good application prospect. In this paper, research progress of crystal growth, numerical simulation and magnetic application by VGF method is reported.
出处
《激光与红外》
CAS
CSCD
北大核心
2015年第5期476-482,共7页
Laser & Infrared
关键词
VGF法
半导体晶体
晶体生长
VGF method
semiconductor crystal
crystal growth
