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基于Si_3N_4探针的单晶硅表面小线宽结构的摩擦诱导纳米加工 被引量:1

Friction-Induced Nanofabrication of Small Line-Width Structure on Silicon Surface Based on Si_3N_4 Probe
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摘要 针对传统纳米加工方法存在的操作复杂和成本昂贵等问题,提出采用以表面自然氧化层作为掩膜,结合Si3N4探针扫描和KOH溶液后续选择性刻蚀的摩擦诱导纳米加工方法.基于针尖半径对加工线宽影响的规律,实现了单晶硅表面较小线宽沟槽结构的加工.在此基础上,通过研究沟槽深度随刻蚀时间的变化规律,确定了最佳的刻蚀加工时间,并详细研究了载荷以及针尖扫描次数对表面沟槽结构加工的影响规律.该方法无需专门制备掩膜,操作简单,有望应用于加工功能表面织构、表面微阀、微反应器及单电子器件等,为纳米结构的加工提供了新途径. Talking into account limitations of traditional nanofabrication approaches such as complicated manipulation and high cost,a new friction-induced fabrication method is proposed.With the native oxidation layer as etching "mask",nanofabrication of silicon can be achieved by scanning with a Si3N4 probe and subsequent selective etching in KOH solution.By optimization of the tip radius,the groove structure with small line-width can be realized on monocrystalline silicon surface.Then,etching time dependence of groove depth is investigated to determine the best etching time for fabricating nanostructure.Finally,the effect of applied load and number of sliding cycles on nanostructure fabrication is studied.As a maskless and simple method,the proposed nanofabrication approach makes possible to fabricate surface texture with special functions,micromechanical valves for fluidic manipulation,single-electron devices,etc.With these advantages and potential applications,the direct fabrication method provides opportunities for nanofabrication.
出处 《上海大学学报(自然科学版)》 CAS CSCD 北大核心 2014年第6期669-679,共11页 Journal of Shanghai University:Natural Science Edition
基金 国家自然科学基金资助项目(91323103 51175441)
关键词 摩擦诱导纳米加工 选择性刻蚀 氮化硅探针 单晶硅 friction-induced nanofabrication selective etching silicon nitride probe monocrystalline silicon
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  • 1CARR D W, SEKARIC L, CRAIGHEAD H a. Measurement of nanomechanical resonant structures in single-crystal silicon [J]. Journal of Vacuum Science gz Technology B, 1998, 16: 3821-3824.
  • 2EvoY S, CARR D W, SEKARIC L, et al. Nanofabrication and electrostatic operation of single- crystal silicon paddle oscillators [J]. Journal of Applied Physics, 1999, 86: 6072-6077.
  • 3CARR D W, EvoY S, SEKARIC L, et al. Measurement of mechanical resonance and losses in nanometer scale silicon wires [J]. Applied Physics Letters, 1999, 75: 920-922.
  • 4PEPIN A, YOUINOU P, STUDER V, et al. Nanoimprint lithography for the fabrication of DNA electrophoresis chips [J]. Microelectronic Engineering, 2002, 61(2): 927-932.
  • 5RESNICK D J, DAUKSHER W J, MANCINI D, et al. Imprint lithography for integrated circuit fabrication [J]. Journal of Vacuum Science & Technology B, 2003, 21(6): 2624-2631.
  • 6GARNETT E, YANG P D. Light trapping in silicon nanowire solar cells [J]. Nano Letters, 2010, 10: 1082-1087.
  • 7王国彪.纳米制造前言综述[M].北京:科学出版社,2009.
  • 8MIYAKE S, KIM J. Fabrication of silicon utilizing mechanochemical local oxidation by diamond tip sliding [J]. Japanese Journal of Applied Physics, 2001, 40(llB): 1247-1249.
  • 9MIYAKE S, KIM J. Nanoprocessing of silicon by mechanochemicM reaction using atomic force mi- croscopy and additional potassium hydroxide solution etching [J]. Nanotechnology, 2005, 16(1): 149-157.
  • 10REN S L, YANG S R, ZHAO Y P. Micro- and macro-tribological study on a self-assembled dual- layer film [J]. Langmuir, 2003, 19: 2763-2767.

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