摘要
采用放电等离子烧结技术分别制备了Si C和钨丝掺杂Si C材料,记录了两种材料烧结工艺曲线,利用XRD方法测定了制备材料的成分。分析工艺曲线结果表明:烧结过程可分为4个阶段,其中Si C-W烧结第二阶段温度明显低于Si C烧结温度,且位移量小于Si C。
The simple Si C substance material and Si C-W composite material are prepared with SPS. The technology parameter curve sintering is recorded during the preparation. The composition of prepared material was measured with XRD. The analysis of the technology curve shows that sintering process can be broke down into four stage. The temperature of stage two of Si C-W sintering is obvious shorter than that of Si C. Besides,the displacement of sintering is less than Si C.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2014年第12期3196-3199,共4页
Bulletin of the Chinese Ceramic Society
