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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT 被引量：1

Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT
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摘要 As is well known, there exists a tradeoff between the breakdown voltage BVcEO and the cut-off frequency fT for a standard heterojunction bipolar transistor （HBT）. In this paper, this tradeoff is alleviated by collector doping engineering in the SiGe HBT by utilizing a novel composite of P＋ and N- doping layers inside the collector-base （CB） space-charge region （SCR）. Compared with the single N-type collector, the introduction of the thin P＋ layers provides a reverse electric field weakening the electric field near the CB metallurgical junction without changing the field direction, and the thin N layer further effectively lowers the electric field near the CB metallurgical junction. As a result, the electron temperature near the CB metallurgical junction is lowered, consequently suppressing the impact ionization, thus BVcEO is improved with a slight degradation in fT. The results show that the product of fTXBVcEo is improved from 309.51 GHz.V to 326.35 GHz.V. As is well known, there exists a tradeoff between the breakdown voltage BVcEO and the cut-off frequency fT for a standard heterojunction bipolar transistor （HBT）. In this paper, this tradeoff is alleviated by collector doping engineering in the SiGe HBT by utilizing a novel composite of P＋ and N- doping layers inside the collector-base （CB） space-charge region （SCR）. Compared with the single N-type collector, the introduction of the thin P＋ layers provides a reverse electric field weakening the electric field near the CB metallurgical junction without changing the field direction, and the thin N layer further effectively lowers the electric field near the CB metallurgical junction. As a result, the electron temperature near the CB metallurgical junction is lowered, consequently suppressing the impact ionization, thus BVcEO is improved with a slight degradation in fT. The results show that the product of fTXBVcEo is improved from 309.51 GHz.V to 326.35 GHz.V.
作者 付强 张万荣 金冬月 丁春宝 赵彦晓 鲁东
机构地区 College of Electronic Information and Control Engineering College of Physics
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期354-358,共5页 中国物理B（英文版）
基金 supported by the National Natural Science Foundation of China(Grant Nos.60776051,61006059,and 61006044) the Beijing Municipal Natural Science Foundation,China(Grant Nos.4142007,4143059,4082007,and 4122014) the Beijing Municipal Education Committee,China(Grant Nos.KM200710005015 and KM200910005001)
关键词 SiGe heterojunction bipolar transistors （HBTs） breakdown voltage cut-off frequency collectoroptimization SiGe heterojunction bipolar transistors （HBTs）, breakdown voltage, cut-off frequency, collectoroptimization
分类号 TN322.8 [电子电信—物理电子学]
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参考文献16

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同被引文献19

  • 1PORRANZL M, WAGNER C, JAEGER H, et al. Anactive quasi-circulator for 77 GHz automotive FMCW radarsystems in SiGe technology [J] . IEEE Microwave andWireless Components Letters, 2015, 25(5) : 313-315.
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  • 3OZTURK E, NEMATI M H, KAYNAK M, et al. SiGeprocess integrated full-3600 microelectromechanicalsystems-based active phase shifter for W-band automotiveradar [J] . IET Microwaves, Antennas & Propagation,2014, 8(11 ) : 835-841.
  • 4CARDOSO A S, OMPRAKASH A P, CHAKRABORTY PS, et al. On the cryogenic RF linearity of SiGe HBTs in afourth-generation 90-nm SiGe BiCMOS technology [J] .IEEE Transactions on Electron Devices, 2015, 62 ( 4 ) :1127-1135.
  • 5PEKARIK J J, ADKISSON J, GRAY P, et al. A 90 nmSiGe BiCMOS technology for mm-wave and highperformanceanalog applications[C]//2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. Coronado, CA :IEEE, 2014: 92-95.
  • 6STATNIKOV K, GRZYB J, HEINEMANN B, et al. 160-GHz to 1 -THz multi-color active imaging with a lenscoupledSiGe HBT chip-set [J] . IEEE Transactions onElectron Devices, 2015, 63(2) : 520-532.
  • 7SCHROTER M, WEDEL G, HEINEMANN B, et al.Physical and electrical performance limits of high-speedSiGeC HBTs-part I : vertical scaling [J]. IEEETransactions on Electron Devices, 2011, 58(11) : 36873696.
  • 8SCHROTERM, KRAUSEJ, RINALDIN, et al. Physicaland electrical performance limits of high-speed SiGeCHBTs- part II : lateral scaling [J]. IEEE Transactions onElectron Devices, 2011, 58(11) : 3697-3706.
  • 9FLEETWOOD Z E, CARDOSO A S, SONG I, et al.Evaluation of enhanced low dose rate sensitivity in fourthgenerationSiGe HBTs[J]. IEEE Transactions on NuclearScience, 2014, 61(6) : 2915-2922.
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Chinese Physics B
2014年 第11期

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