摘要
以偏钨酸铵为钨源、聚乙烯吡咯烷酮为连接剂,采用浸渍提拉法制备了石墨烯-氧化钨复合薄膜,利用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)及Raman光谱等方法对复合结构材料进行了表征,并利用光电流测试、交流阻抗谱(EIS)、瞬态光电流谱和强度调制光电流谱等方法,研究复合薄膜电极在光电作用下界面上的载流子转移过程和电荷传输行为.结果表明,组成薄膜的氧化钨纳米颗粒与石墨烯充分复合,光电性能显著提高;与石墨烯复合后,薄膜的瞬态时间常数增大,电子-空穴对寿命延长;电子传输时间减少,为纯氧化钨薄膜的47.5%.
Composite films of graphene and tungsten oxide were fabricated by dip-coating with ammonium metatungstate as the precursor and polyvinylpyrrolidone as the bridging agent. The as-prepared composites were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, and Raman spectroscopy. Photocurrent test, electrochemical impedance spectroscopy （EIS）, transient photocurrent spectroscopy, and intensity-modulated photocurrent spectroscopy were used to study the transfer process and transport behavior of the charge carriers at the interface of the film electrodes. The results showed that the tungsten oxide nanoparticles were sufficiently composited with graphene. The efficiency of photoelectric conversion improved significantly. The transient constant and the electron-hole lifetime increased after the incorporation of graphene. The electron transit time of the composite film was reduced and was found to be only 47.5% of that of the tungsten oxide film.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2014年第10期1957-1962,共6页
Acta Physico-Chimica Sinica
基金
国家高技术研究发展计划(863)(2011AA050528)
国家自然科学基金(21171175)
湖南省自然科学基金(13JJ6003)资助~~
关键词
氧化钨
石墨烯
复合薄膜
光电化学
界面电荷传输
Tungsten oxide
Graphene
Composite film
Photoelectrochemistry
Interfacial electron transfer
