摘要
采用无压烧结工艺制备了SiC-AlN复相陶瓷材料,采用X射线衍射(XRD)、扫描电镜和激光导热仪对材料的晶相、微结构和导热性能进行了综合研究。实验发现,烧结体的密度和AlN的添加量有关。在AlN添加量低于10%(质量比)时,烧结体的相对密度随着AlN含量的升高而升高。在添加量高于10%时,AlN的添加对于烧结不利。复相陶瓷的热导率随着AlN含量的增加而下降。这和材料内部固溶体的形成有关。XRD测试发现,随着AlN含量的升高,2H固溶相增加。这直接影响到材料的烧结性能和热导率。
SiC-A1N composites were prepared by pressureless sintering. The phase, microstructure and the thermal conductivity was investigated based on XRD, SEM and laser thermal conductivity measure- ments. It was found that the addition of AIN had obvious influence on the densification of SiC. The density of SiC-A1N composites increased with the increase of AlN content up to 10%（wt） and decrease thereafter. The thermal conductivity of SiC-AIN decreased with the increase of A1N content. This can be related to the formation of solid solution of 2H phase. The more the A1N content, the more the 2H phase formed. The presence of 2H phase has obvious influence on the sintering and the thermal conductivity of SiC-A1N composites.
出处
《真空电子技术》
2014年第5期1-3,共3页
Vacuum Electronics
基金
国家自然科学基金项目(51302288)
关键词
碳化硅
氮化铝
无压烧结
热导率
Silicon carbide
Aluminum nitride
Pressureless sintering
Thermal conductivity
