摘要
以锗酸锶纳米线作为光催化材料,分析了光照时间、锗酸锶纳米线用量及罗丹明B浓度对锗酸锶纳米线光催化降解罗丹明B的影响。固体紫外漫散射光谱表明锗酸锶纳米线属于典型的半导体,禁带宽度为3.67eV。随着光照时间的增加,罗丹明B的降解率增加。罗丹明B的起始浓度为10mgL-1、锗酸锶纳米线用量为20mg及光照时间4h时,罗丹明B的降解率为72.39%。随着罗丹明B浓度的增加,其降解率降低至34.92%。
The effect of the violet-visible irradiation time, content of the strontium germanate nanowires and rhodamine B ( RB) concentration on the photocatalytic degradation RB has been investigated using strontium germanate nanowires as the photocatalyst. UV-vis diffusion reflectance spectrum of the strontium germanate nanowires shows that the strontium germanate nanowires belong to typical semiconductor with a band gap of 3. 67 eV. The results show that the RB degradation ratio increases with the increase of the irradiation time. The degradation ratio will be 72. 39% when the initial RB concentration is 10 mgL-1 , content of the strontium germanate nanowires are 20 mg and irradiation time is 4 h. The RB degradation ratio decreases to 34. 92% with the increase of the RB concentration.
出处
《铜业工程》
CAS
2014年第4期19-22,34,共5页
Copper Engineering
基金
安徽省大学生创新创业训练计划项目(AH201310360259)
安徽工业大学SRTP项目(2013013Z)
安徽省科技厅自然科学基金资助项目(1208085QE98)
关键词
锗酸锶纳米线
光催化
扫描电子显微镜
罗丹明B
strontium germanate nanowires
photocatalysis
scanning electron microscopy
rhodamine B (RB)