摘要
采用MOCVD工艺在Ts=4 4 0℃条件下制备组分Bi/Ti=1.4 4的非晶态薄膜 ,经过快速退火处理 ,制备高度择优取向的Bi4Ti3 O12 铁电薄膜 ,在Ts=4 0 0℃条件下制备组分Bi/Ti=1.11的非晶态薄膜 ,经过快速退火处理 ,制备高度择优取向的Bi2 Ti2 O7薄膜 ,较好的退火温度为 6 30℃、时间为 6 0s ;快速退火对薄膜组分的影响不大 ,在相同的退火温度下 ,生成 4 3相还是 2 2相取决于退火前薄膜材料的组分。
In this paper, MOCVD and RTA methods were utilized to fabricate Bi 4Ti 3O 12 thin films on Si(100) substrate. The morphology and phase structure evolution of the films were analyzed by the XRD technique. The results show that the favorite process is to firstly use MOCVD method to fabricate Bi 4Ti 3O 12 thin films on Si(100) substrate with T s=440℃, then use RTA method to treat the films at 630℃ for 60s.
出处
《兵器材料科学与工程》
CAS
CSCD
2002年第3期41-43,50,共4页
Ordnance Material Science and Engineering
