摘要
在玻璃基片温度400℃和650℃之间,讨论TiCl_4—NH_3;—N_2体系TiN常压化学气相沉积(APCVD)及动力学。在500—650℃温度范围内,TiN在高温玻璃表面沉积为反应物扩散控制,低于400℃为表面反应控制,其沉积速度明显受玻璃温度.反应物浓度和气体流速影响。
Atmospheric pressure chemical vapor deposition(APCVD)of TiN and
its kinetics in TiCl4 - NH3 - N2 system have been discussed at the glass substrate temperatures between 400℃ and 650℃. The following results are obtained; The TiN depesition process on the hot glass surface is reactant diffusion-limited in the temperature range of 500℃ and 650℃ , but surface reaction-limited below 400℃, the growth rates of TiN films vary obviously with the substrate temperature, the reactant concentration and the linear gas rate.
出处
《韩山师范学院学报》
2000年第2期57-62,共6页
Journal of Hanshan Normal University
