摘要
用磁控溅射方法在Si (100) 衬底上沉积了氧化锆薄膜。研究和比较了退火前和退火后的薄膜晶体结构、表面形貌以及Al/ZrO2/Si电容的金属-绝缘体-半导体性质。700℃氮气退火后的薄膜具有高的介电常数18,且在2V时漏电流小于1×10-7A/cm2,显示了良好的电学性质。氧化锆将是一种在未来的微电子器件中大有应用前景的新材料。
Thin ZrO2 film is deposited on Si (100) wafer by magnetron sputtering. The crystalstructure, surface morphology of the film, and the electrical properties of a Al/ZrO2/Si metal-insula-tor-semiconductor capacitor are studied before and after annealing. The film shows good electricalproperties such as a high dielectric constant of 18 and a leakage current of less than 1×10-7A/cm2at 2V after 700℃ N2 annealing. ZrO2 could be a promising material for the future microelectronicdevice applications.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第8期71-73,77,共4页
Semiconductor Technology
基金
唐仲英学生科技创新基金资助
