摘要
利用ＳＥＭ、ＴＥＭ以及ｘ射线衍射，研究了磁控溅射Ａｌ膜的退火对膜组织 结构转变的影响。Ａｌ膜被磁控溅射在Ｎｉ基体上，所得镀膜分别经 １００℃、２００℃、 ３００℃、４００℃、５００℃、５５０℃和 ６００℃真空退火。结果表明， １００℃开始 Ａｌ膜再结晶； ４００℃开始有Ａｌ－Ｎｉ金属间化合物相生成，随温度升高，金属间化合物相的形成顺序为 Ａｌ３Ｎｉ—Ａｌ３Ｎｉ２－Ｎｉ３Ａｌ ＡｌＮｉ。薄膜的组织也由开始的细颗粒状组织转变为多边形 晶粒组织。
With SEM, TEM and X-ray diffraction, the effect of thermal annealing on the microstructure of magnetron sputtered Al films has been studied. Al film was magnetron sputtered on Ni substrate. The Al film was annealed in vacuum at 100℃,200℃,300℃,400℃,500℃,550℃ and 600℃. The results show that Al film begins to recrystallize at 100℃ and Al-Ni phase can be formed from 400℃. With the temperature there is an order Al3 Ni-Al3 N12-N13 Al-AINi and pellet grains become equiaxed grains.
出处
《真空》
CAS
北大核心
1991年第5期42-46,共5页
Vacuum
