摘要
锡掺杂的铟锡氧化物透明导电膜（简称膜ＩＴＯ）是一种面电阻率低，透光率高，导电性能好的膜层，近年来在国内外发展较快，其制备方法较多。本文就采用磁控溅射法制备ＩＴＯ 膜的设备及成膜过程中的若干工艺问题进行了探讨。
The transparent electroconductive indium-tin oxide (ITO) film is of small Square reststance,high transparency and good electroconductive performance, so it develops more rapidly in recent years and can be produced by many methods. In this paper it is studied that problems about its forming process and equipment of ITO film produced by magnetron sputtering method.
出处
《真空》
CAS
北大核心
1991年第4期55-61,共7页
Vacuum
