快重离子束诱发金属薄膜在基底上的附着增强效应

Enhanced Adhesion Effects Induced by Fast Heavy Ion Beams for Matel Film on Insulator and Matel Film on Si Substrates

导出

摘要用ＭｅＶ能量的Ｃｌ离子束辐照金属薄膜／绝缘体和硅基底。测量到薄膜在基底上附着增强的阈值剂量，在铜／硅体系中观测到低剂量和高剂量阈值。 Different matel film deposited on insulator and Si substrates were bombarded with MeV Cl ions. The threshold does enhanced adhesion effects were measured by the Scotch Tape respectively. It is found that there are two types of enhanced adhesion effects in Cu-Si system.

作者杨坤山刘正民杨化中

机构地区兰州大学现代物理系

出处《真空》 CAS 北大核心 1991年第3期32-34,共3页 Vacuum

关键词金属薄膜快重离子束附着增强效应

分类号 TN305 [电子电信—物理电子学]

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真空

1991年第3期

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快重离子束诱发金属薄膜在基底上的附着增强效应

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