摘要
基于库仑阻塞效应和量子尺寸效应工作的单电子晶体管(SET)由于具有超小器件尺寸、超低功耗、超低工作电流和超高工作频率等特点,受到人们的重视和深入研究。本文通过简要介绍SET的器件结构、原理和特性,分析了实现SET的关键因素,回顾和评述了SET制作技术的进展及前景。
Single-electron transistor has received extensive attention and intensive research in re-cent years by virtue of its advantages such as ultra-small geometry,ultra-low power dissipation,ultra-low operating voltage and ultra-high operating frequency based on the Coulomb bloc-kade and quantum size effect.In this paper,the basic structure,principle and characteristics of SET are reviewed and analyzed.Technical developments and prospects in fabricating of SET are pre-sented and forecasted.
出处
《微纳电子技术》
CAS
2002年第4期11-18,共8页
Micronanoelectronic Technology
关键词
库仑阻塞
单电子晶体管
工艺制作技术
coulumb blockade
tunneling junction
single-electron transistor
MBE
STM
EBL
