摘要
常温下,用电化学氧化法在单晶硅表面形成 SiO_2钝化膜,钝化液可为有机溶液或纯水,控制电压能调节钝化膜厚度。测试并比较了钝化膜的基本性能。
Thin film of silicon dixide can be grown on the surface of sili-con by electrochemical oxidation at room temperature.The electrolyte for pa-ssivation may be organic solution or pure water.The thickness of oxidicfilm is changed by controlling the voltage.The infrared absorption,character-istics of MOS capacitors and the breakdown voltage of passive films have be-en measured.
关键词
单晶硅
电化学
钝化
钝化膜
monocrystal silicon
passivation
passive film
