摘要
本文对直流磁控反应溅射制备 ZAO薄膜的工艺作了具体分析 ,探讨了沉积温度、氧分压、Al含量和靶基距等对 ZAO薄膜的电阻率、可见光区透射率的影响。
In this paper, the deposition parameters of ZAO films by DC magnetron reactive sputtering are specifically analyzed, and the effects of substrate temperature, oxygen partial pressure, Al content and target-substrate distance (TSD) on resistivity and optical transmittance of ZAO films are discussed.
出处
《真空》
CAS
北大核心
2002年第3期23-26,共4页
Vacuum