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直流磁控反应溅射制备ZAO薄膜工艺参数的研究 被引量:5

Study on deposition parameters of ZAO films by DC magnetron reactive sputtering
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摘要 本文对直流磁控反应溅射制备 ZAO薄膜的工艺作了具体分析 ,探讨了沉积温度、氧分压、Al含量和靶基距等对 ZAO薄膜的电阻率、可见光区透射率的影响。 In this paper, the deposition parameters of ZAO films by DC magnetron reactive sputtering are specifically analyzed, and the effects of substrate temperature, oxygen partial pressure, Al content and target-substrate distance (TSD) on resistivity and optical transmittance of ZAO films are discussed.
出处 《真空》 CAS 北大核心 2002年第3期23-26,共4页 Vacuum
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参考文献1

  • 1裴志亮.透明导电薄膜ZnO:Al的制备、组织结构及光电特性研究.中国科学院金属研究所硕士学位论文[M].,2000..

同被引文献38

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  • 7NUNES P.Performances presented by zinc oxide thin films deposited by spray pyrolysis [J].Thin Solid Films,1999,337:176-179.
  • 8JEONG S H,BOO J H.Influence of target-to-substrate distance on the properties of AZO films grown by RF magnetron sputtering[J].Thin Solid Films,2004,447-448:105-110.
  • 9HERRMANN D,OERTEL M,MENNER R,et al.Analysis of relevant plasma parameters for ZnO:Al film deposition based on data from reactive and non-reactive DC magnetron sputtering[J].Surface & Coatings Technology,2003,174-175:39-47.
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