摘要
在衬底温度为 3 5 0°C的条件下 ,用分子束外延的方法 ,在不同的砷压条件下生长了 Ga As/Al0 .3Ga0 .7As多量子阱结构。 77K的荧光实验证明 ,砷压对样品的光学特性影响显著。认为砷压对低温多量子阱光学特性的影响是点缺陷随砷压的演化和能级间相互补偿的共同结果。通过优化砷压 ,样品的荧光峰的半峰宽减小到 3 me V,这是到目前为止所报道过的最窄的低温多量子阱的荧光峰。相应的垂直场光折变器件的电吸收为 60 0 0
As pressure was changed during the growth of GaAs/Al 0.3 Ga 0.7 As multiple quantum well (MQW) structure at the substrate temperature of 350°C by molecular beam epitaxy (MBE). Strong dependence of photoluminescence(PL) features on As pressure was observed. At optimum As pressure, sharp exciton PL peak with full width at half maximum (FWHM) of 3 meV was achieved in as grown sample while its resistivity was 1×10 7 Ω·cm. The evolution of point defects and the compensation mechanism with As pressure changes were used to explain the results.
出处
《固体电子学研究与进展》
EI
CAS
CSCD
北大核心
2002年第2期219-222,共4页
Research & Progress of SSE
基金
国家自然科学基金资助 (编号 :698962 60 )
